Planar Transistor. BC212 Datasheet


BC212 Transistor. Datasheet pdf. Equivalent


Part Number

BC212

Description

PNP Silicon Epitaxial Planar Transistor

Manufacture

SEMTECH

Total Page 1 Pages
Datasheet
Download BC212 Datasheet


BC212
BC212
PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 10 µA
at -VCE = 5 V, -IC = 2 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 2 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
60
50
5
300
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Symbol
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE(on)
fT
CCBO
Min.
40
60
-
-
60
50
5
-
-
0.6
200
-
Max.
-
300
15
15
-
-
-
0.6
1.1
0.72
-
10
Unit
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007


Features BC212 PNP Silicon Epitaxial Planar Trans istor for general purpose amplifier Ab solute Maximum Ratings (Ta = 25 OC) Par ameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage C ollector Current Total Power Dissipatio n Junction Temperature Storage Temperat ure Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA Collector Base Cutoff Current at -VC B = 30 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Vo ltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitte r Base Breakdown Voltage at -IE = 10 µ A Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitte r Saturation Voltage at -IC = 100 mA, - IB = 5 mA Base Emitter On Voltage at -V CE = 5 V, -IC = 2 mA Gain Bandwidth Pro duct at -VCE = 5 V, -IC = 10 mA, f = 10 0 MHz Output Capacitance at -VCB = 10 V , f = 1 MHz Symbol -VCBO -VCEO -VEBO - IC Ptot Tj TS 1. Emitter 2. Collector 3. Base TO-92 Plastic Pa.
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