BC238

BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Symbol BC237 BC238 BC239 VCBO VCEO VEBO IC Ptot 50 45 6 30 30 25 25 5 100 500 Tj 150 TS - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V BC237 BC238, BC239 Collector Emitter Breakdown Voltage BC237 at IC = 2 mA BC238, BC239 Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter S...