Document
2N3250,A 2N3251,A
2N3250A,2N3251A JAN, JTX, JTXV AVAILABLE
CASE 22, STYLE 1 TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current
@Total Device Dissipation T^ = 25°C
Derate above 25°C
@Total Device Dissipation Jq = 25°C
Derate above 25°C Operating and Storage Temperature
Temperature Range
Symbol vCEO v CBO VEBO
"c
Pd
PD
TJ. Tstg
2N3250 2N3250A 2N3251 2N3251A
40 60 50 60
5.0 200
0.36 2.06
1.2 6.9
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol R 0JC R0JA
Max
0.15 0.49
Unit
mW/°C mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (1) flC = 10 mAdc)
Collector-Base Breakdown Voltage dC = lOptAdc)
Emitter-Base Breakdown Voltage (IE = 10 /.