MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
@ ...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol 2N3252 2N3253 2IM3444
vCEO
30
40
50
v CBO
60
75
80
VEBO
5.0
Pd 1.0 5.71
Unit Vdc Vdc Vdc Watts
mW/°C
Pd Watts 5.0 mW/°C
28.6
Tj. Tstg
- 65 to + 200
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol
Rftjc R 0JA
Max
35 0.175
Unit
°C/W °C/mW
2N3252 2N3253 2N3444
GENERAL PURPOSE
NPN SILICON
JAN, JTX AVAILABLE 2N3253, 2N3444 CASE 79, STYLE 1 TO-39 (TO-205AD)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO) C(l = 10 mAdc, pulsed, Bl = 0)
2N3252 2N3253 2N3444
Collector-Base Breakdown Voltage C(l = 10 ^Adc, Ie = 0)
2N3252 2N3253 2N3444
Emitter-Base Breakdown Voltage (IE = 10 /xAdc,...
