MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
2N3498 2N3500 Symbol 2N3499 2N3501
VCEO VCBO VEBO
ic.
PD
100 150 100 150
6.0 500 | 300
1.0 5.71
PD Tj. Tstg
5.0 28.6
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol R&ic R&JA
Max
35 175
Unit °C/W °C/W
2N3498 thru 2N3501
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.l
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1) (IC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (IC = 10 fiAdc, Ie = 0)
Emitter-Base Breakdo...