2N3500

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3498 2N3500 Symbol 2N3499 2N3501 VCEO VCBO VEBO ic. PD 100 150 100 150 6.0 500 | 300 1.0 5.71 PD Tj. Tstg 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&ic R&JA Max 35 175 Unit °C/W °C/W 2N3498 thru 2N3501 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.l Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 10 fiAdc, Ie = 0) Emitter-Base Breakdo...