2N4405

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T"a = 25°C Derate above 25°C Total Device Dissipation (a Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO ic pd pd TJ. T stg Value 80 80 5.0 1.0 1.25 7.15 8.75 50 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc R0JA Max Unit °C/W °c/w 2N4404 2N4405 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(l) (\q = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage (Ip = 10 j^Adc, Ie = 0) Emitter-Base Breakdown Voltage 0e = 10 /*Adc, lp Collector Cutoff Current (Vcb 60 Vdc, Ie = 0) ...