MPS6520 MPS6521
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS...
MPS6520 MPS6521
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6520 and MPS6521 are silicon
NPN epitaxial
transistors designed for complementary amplifier applications requiring low noise and high DC current gains. The
PNP complementary devices are MPS6522 and MPS6523 respectively.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg
40 25 4.0 100 625 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=30V
ICBO
VCB=30V, TA=60°C
BVCEO
IC=500μA
25
BVEBO
IE=10μA
4.0
VCE(SAT) IC=50mA, IB=5.0mA
fT VCE=10V, IC=2.0mA
300
fT VCE=10V, IC=10mA
400
Cob VCB=10V, IE=0, f=100kHz
NF VCE=5.0V, IC=10μA, RS=10KΩ, BW=15.7kHz, 3.0dB points @ 10Hz and 10kH...