MPS6726
One Watt Amplifier Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol...
MPS6726
One Watt Amplifier
Transistors
PNP Silicon
Features
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
−30 −40 −5.0 −1.0 1.0 8.0
Vdc Vdc Vdc Adc W mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device rel...
