High-Voltage NPN Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Col...
High-Voltage
NPN Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Total Device Dissipation TA=25°C
Junction Temperature
Storage Temperature
Symbol VCEO VCBO VEBO
IC PD
Tj
Tstg
MPSA43
1. EMITTER 2. BASE 3. COLLECTOR
1 2 3
TO-92
Value 200 200 6.0 500
0.625
150
-55 to +150
Unit Vdc Vdc Vdc mAdc
W
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 160Vdc, IE=0) Emitter Cutoff Current (VEB= 4.0Vdc, IC=0)
Symbol V(BR)CEO V(BR)CBO
V(BR)EBO ICBO IEBO
Min 200 200 6.0
-
Max Unit - Vdc - Vdc - Vdc
0.1 µA
0.1 µA
WEITRON
http://www.weitron.com.tw
1/3
29-Mar-06
MPSA43
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
On Charact...