MMPQ2369

MMPQ2369 Quad Switching Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous VCEO VCB VEB IC 15 Vdc 40 Vdc 4.5 Vdc 500 mAdc Each Transistor Four Transistors Equal Power Total Power Dissipation PD @ TA = 25°C 0.4 Derate above 25°C 3.2 W 0.72 6.4 mW/°C Total Power Dissipation PD @ TC = 25°C 0.66 Derate above 25°C 5.3 W 1.92 15.4 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO Vdc 15 — — V(BR)CBO Vdc 40 — — V(BR)EBO Vdc 4.5 ...