MMPQ2907A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors PNP Silicon MMPQ2907 MMPQ2907A 1 16 2 15 3 14 4 13 5 12 6 11 7 10 89 MAXIMUM RATINGS Rating Symbol MMPQ2907 MMPQ2907A Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCB VEB IC –40 –60 –60 –5.0 –600 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 0.52 4.2 1.0 Watts 8.0 mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 0.8 6.4 2.4 Watts 19.2 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) MMPQ2907 MMPQ2907A Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (...