MMPQ3467

MMPQ3467 Quad Memory Driver Transistor PNP Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous Power Dissipation @ TA = 25°C Derate above 25°C Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Value −40 −40 −5.0 −1.0 Unit Vdc Vdc Vdc Adc PD PD TJ, Tstg Each Transistor Four Transistors Equal Power 0.52 1.2 4.2 9.6 1.0 2.5 8.0 20 −55 to +150 W mW/°C W mW/°C °C http://onsemi.com 16 1 CASE 751B−05, STYLE 4 SO−16 1 16 2 15 3 14 4 13 5 12 6 11 7 10 89 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage(1) (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Curren...