Document
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
R1
BASE
(OUTPUT)
(INPUT) R2
PIN 2 EMITTER (GROUND)
MARKING DIAGRAMS
XX MG G
1
SC−59 CASE 318D
STYLE 1
XXX MG G
1
SOT−23 CASE 318 STYLE 6
XX MG G
1
XX M 1
SC−70/SOT−323 CASE 419 STYLE 3
SC−75 CASE 463 STYLE 1
XX M 1
SOT−723 CASE 631AA
STYLE 1
XM 1
SOT−1123 CASE 524AA
STYLE 1
XXX M G
= Specific Device Code = Date Code* = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2000
1
July, 2018 − Rev. 9
Publication Order Number: DTA114E/D
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
Table 1. ORDERING INFORMATION Device
Part Marking
Package
Shipping†
MUN2111T1G, SMUN2111T1G
6A
SC−59
3000 / Tape & Reel
(Pb−Free)
SMUN2111T3G
6A
SC−59
10000 / Tape & Reel
(Pb−Free)
MMUN2111LT1G, SMMUN2111LT1G
A6A
SOT−23
3000 / Tape & Reel
(Pb−Free)
MMUN2111LT3G, SMMUN2111LT3G
A6A
SOT−23
10000 / Tape & Reel
(Pb−Free)
MUN5111T1G, SMUN5111T1G
6A
SC−70/SOT−323
3000 / Tape & Reel
(Pb−Free)
DTA114EET1G, NSVDTA114EET1G
6A
SC−75
3000 / Tape & Reel
(Pb−Free)
DTA114EM3T5G, NSVDTA114EM3T5G
6A
SOT−723
8000 / Tape & Reel
(Pb−Free)
NSBA114EF3T5G
F
SOT−1123
8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
PD, POWER DISSIPATION (mW)
300
250
200 (1) (2) (3) (4) (5)
150
100
(1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm2, 1 oz. copper trace (5) SOT−723; Minimum Pad
50
0 −50 −25
0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
Table 2. THERMAL CHARACTERISTICS Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2111)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA114EE)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
Junction and Storage Temperature Range
1. FR−4 @.