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MMUN2111LT3 Dataheets PDF



Part Number MMUN2111LT3
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Digital Transistor
Datasheet MMUN2111LT3 DatasheetMMUN2111LT3 Datasheet (PDF)

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual compone.

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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com PIN CONNECTIONS PIN 3 COLLECTOR PIN 1 R1 BASE (OUTPUT) (INPUT) R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS XX MG G 1 SC−59 CASE 318D STYLE 1 XXX MG G 1 SOT−23 CASE 318 STYLE 6 XX MG G 1 XX M 1 SC−70/SOT−323 CASE 419 STYLE 3 SC−75 CASE 463 STYLE 1 XX M 1 SOT−723 CASE 631AA STYLE 1 XM 1 SOT−1123 CASE 524AA STYLE 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2000 1 July, 2018 − Rev. 9 Publication Order Number: DTA114E/D MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping† MUN2111T1G, SMUN2111T1G 6A SC−59 3000 / Tape & Reel (Pb−Free) SMUN2111T3G 6A SC−59 10000 / Tape & Reel (Pb−Free) MMUN2111LT1G, SMMUN2111LT1G A6A SOT−23 3000 / Tape & Reel (Pb−Free) MMUN2111LT3G, SMMUN2111LT3G A6A SOT−23 10000 / Tape & Reel (Pb−Free) MUN5111T1G, SMUN5111T1G 6A SC−70/SOT−323 3000 / Tape & Reel (Pb−Free) DTA114EET1G, NSVDTA114EET1G 6A SC−75 3000 / Tape & Reel (Pb−Free) DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT−723 8000 / Tape & Reel (Pb−Free) NSBA114EF3T5G F SOT−1123 8000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PD, POWER DISSIPATION (mW) 300 250 200 (1) (2) (3) (4) (5) 150 100 (1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm2, 1 oz. copper trace (5) SOT−723; Minimum Pad 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 2. THERMAL CHARACTERISTICS Characteristic THERMAL CHARACTERISTICS (SC−59) (MUN2111) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 2) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Thermal Resistance, (Note 1) Junction to Lead (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 2) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Thermal Resistance, (Note 1) Junction to Lead (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 2) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Thermal Resistance, (Note 1) Junction to Lead (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTA114EE) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 2) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 2) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range 1. FR−4 @.


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