MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier Transistor Surface Mount
COLLECTOR 3
MSD602-RT1
Mot...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier
Transistor Surface Mount
COLLECTOR 3
MSD602-RT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
2 BASE
Value
1 EMITTER
Unit
Collector–Base Voltage
V(BR)CBO
60
Vdc
Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous
V(BR)CEO V(BR)EBO
IC
50 7.0 500
Vdc Vdc mAdc
Collector Current — Peak
IC(P)
1.0 Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Power Dissipation Junction Temperature Storage Temperature
PD 200 mW
TJ 150 °C
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic
Symbol
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0) DC Current Gain(1)
(VCE = 10 Vdc, IC = 150 mAdc) (VCE = 10 Vdc, IC = 500 mAdc)
V(BR)CEO V(BR)CB...