MSD602-RT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 MSD602-RT1 Motorola Preferred Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol 2 BASE Value 1 EMITTER Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous V(BR)CEO V(BR)EBO IC 50 7.0 500 Vdc Vdc mAdc Collector Current — Peak IC(P) 1.0 Adc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation Junction Temperature Storage Temperature PD 200 mW TJ 150 °C Tstg – 55 ~ +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 150 mAdc) (VCE = 10 Vdc, IC = 500 mAdc) V(BR)CEO V(BR)CB...