MSD1328-RT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount COLLECTOR 3 MSD1328-RT1 Motorola Preferred Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol 2 BASE 1 EMITTER Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 12 Vdc Collector Current — Continuous IC 500 mAdc Collector Current — Peak IC(P) 1000 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg – 55 ~ +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 µAdc, IE = 0) V(BR)EBO Collector–Base Cutoff Current (VCB = 25 Vdc, IE = 0) DC Current Gain(1) (VCE = 2.0 Vdc, IC = 500 mAdc) ICBO...