BSS84LT1 Small-Signal MOSFET Datasheet

BSS84LT1 Datasheet, PDF, Equivalent


Part Number

BSS84LT1

Description

Small-Signal MOSFET

Manufacture

Motorola

Total Page 3 Pages
Datasheet
Download BSS84LT1 Datasheet


BSS84LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenlinePortfolio of devices with energy–conserv-
ing traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Reduced power loss conserves
energy, making this device ideal for use in small power manage-
ment circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless
telephones.
1
Energy Efficient
GATE
Miniature SOT–23 Surface Mount Package Saves Board Space
3 DRAIN
2 SOURCE
BSS84LT1
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
3
1
2
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
BSS84LT1 = PD
Device
BSS84LT1
BSS84LT3
ORDERING INFORMATION
Reel Size
Tape Width
78mm embossed tape
138mm embossed tape
Quantity
3000
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
50
± 20
130
520
225
– 55 to 150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
4–13

BSS84LT1
BSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Rise Time
Turn–Off Delay Time
(VDD = –15 Vdc, ID = –2.5 Adc,
RL = 50 )
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
50
0.8
50
Typ Max Unit
— — Vdc
µAdc
— 0.1
— 15
— 60
±60 µAdc
— 2.0 Vdc
5.0 10 Ohms
— — mS
30 — pF
10 —
5.0 —
2.5
1.0
16
8.0
6000
ns
pC
— 0.130
— 0.520
2.5 —
A
V
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
VDS = 10 V
0.5
0.4
0.3
25°C
– 55°C
150°C
0.2
0.1
0
1 1.5 2 2.5 3 3.5 4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
0.5
0.45 TJ = 25°C
0.4
VGS = 3.5 V
3.25 V
0.35
0.3 3.0 V
0.25
0.2 2.75 V
0.15
2.5 V
0.1
0.05 2.25 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
4–14
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS(on) Small-Signal MOSFETs TM OS Single P-Channel Field Effect Transi stors Part of the Greenline™ Portfol io of devices with energy–conserv- i ng traits. These miniature surface mou nt MOSFETs utilize Motorola’s High C ell Density, HDTMOS process. Reduced po wer loss conserves energy, making this device ideal for use in small power ma nage- ment circuitry. Typical applicat ions are dc–dc converters, load swit ching, power management in portable and battery–powered products such as co mputers, printers, cellular and cordles s telephones. 1 • Energy Efficient GATE • Miniature SOT–23 Surface Mount Package Saves Board Space ™ 3 DRAIN 2 SOURCE BSS84LT1 Motorola Prefe rred Device P–CHANNEL ENHANCEMENT–M ODE TMOS MOSFET 3 1 2 CASE 318–08, St yle 21 SOT–23 (TO–236AB) MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Con.
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