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BSP16T1 Dataheets PDF



Part Number BSP16T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Transistors
Datasheet BSP16T1 DatasheetBSP16T1 Datasheet (PDF)

BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features •ăPb-Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD -300 -350 -6.0 -100 1.5 Vdc Vdc Vdc mAdc W Storage Temperature Range PD -65 to °C +150 Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ra.

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BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features •ăPb-Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD -300 -350 -6.0 -100 1.5 Vdc Vdc Vdc mAdc W Storage Temperature Range PD -65 to °C +150 Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 83.3 °C/W 1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x 0.059 in; mounting pad for the collector lead min. 0.93 sq. in. http://on.


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