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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907 P2N2907A
TO-92 Plastic Package
CB E
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
P2N2907
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage
VCEO VCBO VEBO
40 60
5
Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC
ICM PD
600 625
5
Total Power Dissipation @ TC=25ºC Derate above 25ºC
PD
1.5 12
Operating and Storage Junction Temperature Range
Tj, Tstg
- 55 to +150
P2N2907A 60 60
UNIT V V V mA
mW mW/ºC
W mW/ºC
ºC
THERMAL RESISTANCE Junction to Case Junction to Ambient
Rth (j-c) Rth (j-a)
83.3 ºC/W 200 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage Collector Base .