1N5446ARL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods. Excellent Q Factor at High Frequencies Guaranteed Capacitance Change — 2.0 to 30 V Capacitance Tolerance — 10% and 5.0% Complete Typical Design Curves 1N5446ARL 1N5448ARL 1N5456A 6.8 – 100 pF 30 VOLTS VOLTAGE–VARIABLE CAPACITANCE DIODES 2 MAXIMUM RATINGS(1) 1 CASE 51–02 (DO–204AA) Rating Symbol Value Unit Reverse Voltage Device Dissipation @ TA = 25°C Derate above 25°C VR 30 Volts PD 400 mW 2.67 mW/°C Operating Junction Temperature Range TJ +175 °C Storage Temperature Range Tstg – 65 to + 200 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µAd...