2N5640

MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching N–Channel — Depletion Order this document by 2N5640/D 2N5640 1 DRAIN 3 GATE 2 SOURCE Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage Reverse Gate–Source Voltage VDG VGSR 30 30 Vdc Vdc Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C IGF PD 10 mAdc 350 mW 2.8 mW/°C Thermal Resistance, Junction to Ambient Junction Temperature Range Storage Temperature Range RqJA TJ Tstg 357 – 65 to +150 – 65 to +150 °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0) (VGS = –15 Vdc, VDS = 0, TA = 100°C) Drain Cutoff Current (VDS = 15 Vdc, VGS = –6.0 Vdc) (VDS = 15 Vdc, VGS = –6.0 Vdc, TA = 100°C) ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(1) (VDS = 20 Vdc, VGS = 0) Drain–So...