J304

MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE J304 MAXIMUM RATINGS Rating Symbol Value Drain – Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG VGS IG PD – 30 – 30 10 350 2.8 Lead Temperature (1/16″ from Case for 10 Seconds) TL 300 Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = –20 Vdc, VDS = 0) Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL– SIGNAL CHARACTERISTICS Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Unit Vdc Vdc mA mW mW/°C °C °C Sy...