PZTA42T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount NPN Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA42T1 Motorola Preferred Device SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit 4 Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING VCEO VCBO VEBO IC PD Tstg TJ 300 300 6.0 500 1.5 – 65 to +150 150 Vdc Vdc Vdc mAdc Watts °C °C 1 2 3 CASE 318E-04, STYLE 1 TO-261AA P1D THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction-to-Ambient(1) RθJA 83.3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Unit °C/W Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 — Vdc Colle...