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MBD101

ON Semiconductor

Schottky Barrier Diodes

MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable a...


ON Semiconductor

MBD101

File Download Download MBD101 Datasheet


Description
MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features Low Noise Figure − 6.0 dB Typ @ 1.0 GHz Very Low Capacitance − Less Than 1.0 pF High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Reverse Voltage Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 VR PF Value 7.0 280 225 Unit V mW Derate above 25°C MBD101 MMBD101LT1 2.2 mW/°C 1.8 Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposur...




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