MV209

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package 31 Cathode Anode SC–70/SOT–323 31 Cathode Anode SOT–23 21 Cathode Anode TO–92 MAXIMUM RATINGS Rating Symbol MBV109T1 MMBV109LT1 MV209 Unit Reverse Voltage Forward Current VR IF 30 Vdc 200 mAdc Forward Power Dissipation @ TA = 25°C Derate above 25°C PD 280 2.8 200 200 mW 2.0 1.6 mW/°C Junction Temperature Storage Temperature Range TJ Tstg +125 –55 to +150 °C °C DEVICE MARKING MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc) Diode C...