MMBD6100LT1G

MMBD6100LT1G Monolithic Dual Switching Diode Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR IF IFM(surge) 70 200 500 Vdc mAdc mAdc Characteristic Symbol Max Unit Total Device Dissipation, FR−5 Board (Note 1) PD TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 ...