Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio
MMBV105GLT1
Motorola Preferred Device
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
3 Cathode
1 Anode
3
1 2
CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C Derate above 25°C
VR 30
IF 200
PD 225 1.8
Junction Temperature Storage Temperature Range DEVICE MARKING
TJ +125 Tstg – 55 to +150
MMBV105GLT1 = M4E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 28 Vdc)
Unit Vdc mAdc mW mW/°C °C °C
Symbol V(BR)R
IR
Device Type MMBV105GLT1
CT VR = 25 Vdc, f = 1.0 MHz
pF
Min Max
1.5 2.