MPSH10 MPSH11 SILICON NPN RF TRANSISTORS
TO-92 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMIC...
MPSH10 MPSH11 SILICON
NPN RF
TRANSISTORS
TO-92 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon
NPN RF
transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO PD TJ, Tstg ΘJA
30 25 3.0 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=25V
IEBO
VEB=2.0V
BVCBO
IC=100μA
30
BVCEO
IC=1.0mA
25
BVEBO
IE=10μA
3.0
VCE(SAT) IC=4.0mA, IB=0.4mA
VBE(ON)
VCE=10V, IB=4.0mA
hFE VCE=10V, IC=4.0mA
60
fT
VCE=10V, IC=4.0mA, f=100MHz
650
Ccb VCB=10V, IE=0, f=1.0MHz
Crb
VCB=10V, IE=0, f=1.0MHz (MPSH10)
0.35
Crb
VCB=10V, IE=0, f=1.0MHz ...