MMBV3401LT1

ON Semiconductort Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Capacitance  0.7 pF (Typ) at VR = 20 Vdc Very Low Series Resistance at 100 MHz  0.34 Ohms (Typ) @ IF = 10 mAdc MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR PD TJ Tstg Value 35 200 2.0 +125 –55 to +150 MMBV3401LT1 ON Semiconductor Preferred Device Unit Vdc mW mW/°C °C °C 3 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) 3 Cathode 1 Anode DEVICE MARKING MMBV3401LT1 = 4D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µAdc) V(BR)R 35 — — Vdc Diode Capac...