Silicon Hyper Abrupt Tuning Diodes
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hyper-Abrupt Tuning Diodes
These devices are designed with high capacitan...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hyper-Abrupt Tuning Diodes
These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning applications in lower RF frequencies. High Capacitance: 120–250 pF Large Capacitance Change with Small Bias Change Guaranteed High Q Available in Standard Axial Glass Packages
2 Anode
1 Cathode
MV1403 MV1404 MV1405
120 – 250 pF 12 VOLTS HIGH TUNING RATIO VOLTAGE–VARIABLE CAPACITANCE DIODES
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR 12 Vdc
Forward Current
IF 250 mAdc
Device Dissipation @ TA = 25°C Derate above 25°C
PD 400 mW 2.67 mW/°C
1 CASE 51–02 (DO–204AA)
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Char...
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