EPITAXIAL TRANSISTORS. MPSA55 Datasheet


MPSA55 TRANSISTORS. Datasheet pdf. Equivalent


Part Number

MPSA55

Description

NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Manufacture

CDIL

Total Page 4 Pages
Datasheet
Download MPSA55 Datasheet


MPSA55
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
MPSA05,MPSA06
MPSA55,MPSA56
TO-92
Plastic Package
EBC
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25°C unless otherwise specified)
DESCRIPTION
SYMBOL
MPSA05
MPSA55
MPSA06
MPSA56
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation@Ta=25°C
Derate Above 25°C
Total Device Dissipation@ Tc=25°C
Derate Above 25°C
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
60
60
4
500
625
5.0
1.5
12
-55 to +150
80
80
THERMAL RESISTANCE
Junction to ambient
Rth(j-a) (1)
200
Junction to case
Rth(j-c)
83.3
(1) Rth(j-a) is measured with the device soldered into a typical printed circuit board.
UNITS
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
°C/mW
°C/mW
Continental Device India Limited
Data Sheet
Page 1 of 4

MPSA55
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPSA05,MPSA06
MPSA55,MPSA56
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
VCEO * IC=1mA,IB=0
MPSA05/55
MPSA06/56
Emitter-Base Voltage
VEBO IE=100uA, IC=0
Collector-Cut off Current
ICBO
MPSA05/55
VCB=60V, IE = 0
MPSA06/56
VCB=80V, IE = 0
Collector-Cut off Current
ICEO VCE=60V,IB =0
Collector-Emitter (sat) Voltage
VCE(sat) IC=100mA,IB=10mA
Base-Emitter(on) Voltage
VBE(on) IC=100mA,VCE=1V
DC Current Gain
hFE VCE=1V,IC=10mA
VCE=1V,IC=100mA
60
80
4.0
100
100
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
DYNAMIC CHARACTERISTICS
TYP
Transition Frequency
NPN fT** IC=10mA, VCE=2V
f=100MHz
PNP
IC=100mA, VCE=1V
f=100MHz
100
50
*Pulse Test : Pulse Width < 300us, Duty Cycle < 2%.
** fT is defined as the frequency at which IhfeI extrapolates to unity.
MAX
UNITS
V
V
V
0.1 uA
0.1 uA
0.1 uA
0.25 V
1.2 V
uA
MAX
UNITS
MHz
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company NPN/PNP SILICON PLANAR EPIT AXIAL TRANSISTORS MPSA05,MPSA06 MPSA55 ,MPSA56 TO-92 Plastic Package EBC Amp lifier Transistors ABSOLUTE MAXIMUM RA TINGS(Ta=25°C unless otherwise specifi ed) DESCRIPTION SYMBOL MPSA05 MPSA5 5 MPSA06 MPSA56 Collector Emitter Vol tage Collector Base Voltage Emitter Bas e Voltage Collector Current Continuous Total Device Dissipation@Ta=25°C Derat e Above 25°C Total Device Dissipation@ Tc=25°C Derate Above 25°C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 60 6 0 4 500 625 5.0 1.5 12 -55 to +150 80 80 THERMAL RESISTANCE Junction to amb ient Rth(j-a) (1) 200 Junction to ca se Rth(j-c) 83.3 (1) Rth(j-a) is mea sured with the device soldered into a t ypical printed circuit board. UNITS V V V mA mW mW/°C W mW/°C °C °C/mW ° C/mW Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSIST.
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