MPSA12
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
DARLINGTON TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter...
MPSA12
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
DARLINGTON
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage Total Device Dissipation (S T"a = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCES v EBO PD
TJ- Tstg
Value 20 10 625 5.0
-55 to +150
Unit
Vdc Vdc
mW
mW/°C
°C
Refer to 2N6426 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol R0JA
Max
200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage dC = 100 /uAdc, B| = 0)
Collector Cutoff Current
(V CB = 15 Vdc, El = 0)
Collector Cutoff Current
(VC E = 15 Vdc, Vbe = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, Cl = 0)
ON CHARACTERISTICS
DC Current Gain dC = 10 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage dC = 10 mAdc, Bl = 0.01 mAdc)
Base-Emitter On Voltage dC = 10 mAdc, Vce = 5.0 Vdc)
Symbol V (BR)CES
'CBO 'CES...