BC487 CURRENT TRANSISTORS Datasheet

BC487 Datasheet, PDF, Equivalent


Part Number

BC487

Description

HIGH CURRENT TRANSISTORS

Manufacture

Motorola

Total Page 1 Pages
Datasheet
Download BC487 Datasheet


BC487
BC485
BC487
BC489
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH CURRENT TRANSISTORS
NPN SILICON
Refer to MPSA05 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T s tg
Symbol
Rfljc
Rwc
BC BC BC
485 487 489
45 60 80
45 60 80
5.0
1.0
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min.
Typ.
|| |
|
Collector-Emitter Breakdown Voltage*
(IC = 10 mAdc, Is = 0)
BC485
BC487
BC489
-V(BR)CE0
45
60
80
Collector-Base Breakdown Voltage
(IC = 100 nAdc, Ie = 0)
BC485
BC487
BC489
V(BR)CBO
45
60
80
Emitter-Base Breakdown Voltage
(IE = 10 nAdc, Ic = 0)
V(BR)EBO
5.0
Collector Cutoff Current
Vcb = 30 Vdc - Ie =
Vcb = 40 Vdc - Ie =
Vqb = 60 Vdc - Ie =
ON CHARACTERISTICS*
BC485
BC487
BC489
ICB0
100
100
100
DC Current Gain
(IC = 1 mAdc - Vce = 2.0 Vdc)
(IC = 100 mAdc - Vce = 2.0 Vdc)
dC = 1 Adc - Vce = 5.0 Vdc)
full range
-L
-A
-B
hFE 40
60 400
60 120 150
100 160 250
160 260 400
15
Collector Emitter Saturation Voltage
(IC = 500 mAdc - Ib = 50 mAdc)
(IC = 1 Adc - Ib = 100 mAdc)
VCE(sat)
-
0.2 0.50
0.3
Base Emitter Saturation Voltage
(IC = 500 mAdc, Ib = 50 mAdc)
(IC = 1 Adc - Ib = 100 mAdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
0.85
0.90
1.20
Current-Gain-Bandwidth Product
(IC = 50 mAdc, VcE = 2.0 Vdc, f = 1 00 MHz)
fT
200
Output Capacitance
(Vcb = TO Vdc, Ie = 0, f = 1 .0 MHz)
Cob
7
Input Capacitance
(Vbe = 0.5 Vdc, Ic = 0, f = 1 .0 MHz)
' Pulse test - Pulse width = 300 us - Duty Cycle 2%.
— —Cib
50
Unit
Vdc
Vdc
Vdc
nAdc
Vdc
Vdc
MHz
pF
PF
2-94


Features BC485 BC487 BC489 CASE 29-02, STYLE 17 T O-92 (TO-226AA) HIGH CURRENT TRANSISTOR S NPN SILICON Refer to MPSA05 for graph s. MAXIMUM RATINGS Rating Collector-Em itter Voltage Collector-Base Voltage Em itter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Devi ce Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Te mperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Jun ction to Case Thermal Resistance, Junct ion to Ambient Symbol VCEO VCBO VEBO i c PD pd Tj, T s tg Symbol Rfljc Rwc BC BC BC 485 487 489 45 60 80 45 60 80 5. 0 1.0 625 5.0 1.5 12 -55 to +150 Max 83 .3 200 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C Unit °C/W °c/w ELECT RICAL CHARACTERISTICS (Ta = 25°C unles s otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min. Typ. || | | Collector-Emitter Breakdown Volt age* (IC = 10 mAdc, Is = 0) BC485 BC 487 BC489 — -V(BR)CE0 45 60 80 Collector-Base Breakdown.
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