BC640

Elektronische Bauelemente BC636/638/640 PNP Type Plastic Encapsulate Transistors FEATURE Power Dissipation: PCM: 0.83 mW (Tamb=25oC) RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.5±0.2 TO-92 4.55±0.2 3.5±0.2 14.3±0.2 MAXIMUM RATINGS (TA=25 oC unless otherwise specified) 0.4 6+–00..11 0.43+–00..0078 (1.27 Typ). 123 1.25+–00..22 2.54±0.1 1: Emitter 2: Collector 3: Base PARAMETERS SYMBOLS Collector - Emitter Voltage BC636 VCEO BC638 Collector - Base Voltage BC640 BC636 VCBO BC638 Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation BC640 VEBO IC ICP IB Junction, Storage Temperature Thermal Resistance from Junction to Ambient TJ,TSTG RθJA* ELECTRICAL CHARACTERISTICS (TA=25 oC unless otherwise specified) VALUES UNIT -45 -60 -80 -45 -60 -100 -5 -1 -1.5 100 150, -65 ~ 150 150 V V V V V V V A A mA oC K/w PARAMETERS Collector - emitter breakdown voltage Collector cut-off current Emitter cut-of...