BC639

ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g BC635 BC637 BC639 BC635 BC637 BC639 Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj TS Value 45 60 100 45 60 80 5 1 1.5 100 200 830 150 - 55 to + 150 Unit V V V A A mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Curren...