Elektronische Bauelemente
BC635 / BC637 / BC639
NPN Type Plastic Encapsulated Transistor
FEATURE High current transist...
Elektronische Bauelemente
BC635 / BC637 / BC639
NPN Type Plastic Encapsulated
Transistor
FEATURE High current
transistor
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
4.5±0.2
14.3±0.2
0.4 6+–00..11
0.43+–00..0078
(1.27 Typ). 123
1.25+–00..22
2.54±0.1
1: Emitter 2: Collector 3: Base
MAXIMUM RATINGS (TA=25 oC unless otherwise specified)
PARAMETERS
SYMBOLS
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
BC635 BC637 BC639 BC635 BC637 BC639
VCEO
VCBO
VEBO IC PC
TJ,TSTG
ELECTRICAL CHARACTERISoTICS (TA=25 oC unless otherwise specified)
VALUES
45 60 80 45 60 100 5 1 0.625 150, -65 ~ 150
UNIT
V V V V V V V A W oC
PARAMETERS
Collector - emitter breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector - emitter saturation voltage Base - emitter voltage Transition f...