BCX59

MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient vceo VCBO VEBO ic PD pd Tj, T stg Symbol Ryjc Rejc BCX BCX 58 59 32 45 32 45 7.0 100 625 5.0 1.5 12 -55 to +150 Max 83.3 200 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C Unit °C/W °c/w BCX58 BCX59 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Type Symbol OFF CHARACTERISTICS Min. Typ. Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0) BCX58 BCX59 V(BR)CE0 32 45 Emitter-Base Breakdown Voltage (IE = 1 uAdc, CI = 0) all V(BR)EBO 7 8.7 Collector Cutoff ...