BDB04
CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BDB02A for graphs.
MAXIM...
BDB04
CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT
AMPLIFIER
TRANSISTORS
PNP SILICON
Refer to BDB02A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25 °C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol VCEO VCBO VEBO
ic
PD
pd
Tj, T stg
Symbol
Rwc Rwc
Value 45 60 5.0 1.0 1.0 8.0 2.5 20
-55 to +150
Max
50 125
Unit Vdc Vdc Vdc Ade Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W °c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
| Symbol | Min. | Typ. | Max. | Unit
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0)
V(BR)CES
45
Vdc
Collector Cutoff Current (V C B = 45 V, El = 0)
Emitter Cutoff Current (VEB = 4 ...
