BDB05

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T s tg Symbol R«JC Rwc Value 80 120 7.0 1.0 1.0 8.0 2.5 20 -55 to +150 Max 50 125 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Unit °C/W °c/w BDB05 CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT HIGH VOLTAGE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 30 mA, Ib = 0) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage (IE = lOOuAdc, Ic = 0) Collector Cutoff Current (VcB = 90 Vdc, IE = 0) (VcB = 90 Vdc, Ie = 0, Ta ...