MMBTA43

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO V EB 'C Value MMBTA42 MMBTA43 300 200 300 200 6.0 6,0 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, T^ = 25°C Derate above 25°C PD Storage Temperature Tstg Thermal Resistance Junction to Ambient RflJA Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Max 350 2.8 150 . 357 Unit mW mW/°C °C °C/W MMBTA42r43 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to MPSA42 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown VoltageO) Or = 1.0 mAdc, Ib = 0) MMBTA42 MMBTA43 Collector-Base Breakdown Voltage Or. = 100 /xAdc, El = 0) MMBTA42 MMBTA43 Emitter-Base Breakdown Voltage E(l = 100 /xAdc, lc = 0) Collector Cutoff Current (VCB = 200 Vdc, l£ = ...