Document
MMBTA55,56
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB) DRIVER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
"C
MMBTA55 MMBTA56
60 80 60 80
4.0 500
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
"Total Device Dissipation, Ta = 25°C Derate above 25°C
Symbol PD
Storage Temperature
Tstq
"Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350
2.8 150 357
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.!
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown VoltageO) (tC = 1.0 mAdc, Bl = 0)
Emitter-Base Breakdown Voltage (IE = 100 ^Adc, cl = 0)
Collector Cutoff Current
(Vce = 60 Vdc, Bl = 0)
Collector Cutoff Current
(Vcb = 60 Vdc, El = 0) (VcB = 80 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, Vce = 1.0 Vdc) dC = 100 mAdc,.