MMBTA55

MMBTA55-A56 PNP General Purpose Transistor Features Epitaxial planar die construction. Complementary NPN type available(MMBTA05/MMBTA06). Low collector-emitter saturation voltage. RoHS compliant package Application Ideal for medium NPN amplification and switching. Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MMBTA55-A56] © Bruckewell Technology Corporation Rev. A -2014 MMBTA55-A56 PNP General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATING @ Ta=25°C unless otherwise specified Symbol Parameter MMBTA55 MMBTA56 VCBO Collector-Base Voltage -60 -80 VCEO Collector-Emitter Voltage -80 -80 VEBO Emitter-Base Voltage -4 IC collector current (DC) -0.5 PC Collector Dissipation -0.3 RθJA Thermal resistance junction to ambient 417 Tj,Tstg Junction and Storage Temperature -55 to +150 Unit V V V A W °C/W °C Ordering Information Type No. MMBTA55 MMBTA56 Marking 2H 2GM Package Co...