BCW33LT1G

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 32 Vdc 32 Vdc 5.0 Vdc 100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2), TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the ...