2N3506

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°c Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3506 2N3S07 VCEO VCBO VEBO ic 40 50 60 80 5.0 3.0 PD 1.0 5.71 Pd 5.0 28.6 TJ- Tstg -65 to + 200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rfljc RTRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown VoltageO) dp = 10 mAdc, pulsed, Ib = 0) Collector-Base Breakdown Voltage dC = 100 /iAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 10 jxAdc, Ic ...