MAXIMUM RATINGS
Rating CoHector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuou...
MAXIMUM RATINGS
Rating CoHector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
2N35T0 2N3511 Symbol 2N3647 2N3648
VCEO VCBO VEBO
"C
10 15 40 40
6.0
500 TO-46 TO-52 2N3647 2N3510 2N3648 2N3511
PD 400 360
2.28
2.06
Pd Tj. Tstg
2.0 11.43
1.2 6.9
-65 to +200
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C Watts mW/°C
°C
2N3510 2N3511
CASE 27, STYLE 1
TO-52 (TO-206AC)
2N3647 2N3648
CASE 26, STYLE 1
TO-46 (TO-206AB)
SWITCHING
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged) C(l = 10 mAdc, Bl = 0)
2N3510, 2N3647 2N3511, 2N3648
Collector-Base Breakdown Voltage c(l = 10/uAdc, Ie = 0)
Emitter-Base Breakdown Voltage E(l = 10 /xAdc, lc = 0)
Collector Cutoff Current
(VCE = 10 Vdc, VE B...