2N3637

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140 175 140 175 5 1 1 5.71 5 28.6 -65 to +200 UNITS V V V A W mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Breakdown Voltage BVCEO * IC=10mA, IB =0 2N3635 2N3636, 37 MIN MAX UNITS 140 V 175 V Collector Base Breakdown Voltage 2N3635 2N3636, 37 BVCBO IC=1...