2N3635

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/\ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3634 2N3636 Symbol 2N3635 2N3637 VCEO VCBO VEBO 'C PD 140 175 140 175 5.0 1.0 1.0 5.71 Pd TJ- Tstg 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C 2N3634 thru 2N3637 JAN, JTX AVAILABLE CASE 79, STYLE 1 TO-39 (TO-39-205AD) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) C(l = 10 mAdc, Ib = 0) 2N3634, 2N3635 2N3636, 2N3637 Collector-Base Breakdown Voltage (lC = 100 /xAdc, l£ = 0) 2N3634, 2N3635 2N3636, 2N3637 Emitter-Base Breakdown Voltage (IE = 10/iAdc, Iq = °> Collector Cutoff Current (Vcb = 100 Vdc, Ie = 0) Emitter Cutoff Current (VBE = 3.0 ...