2NS022 2N5023
CASE 079-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
Refer to 2N3467 for graphs.
...
2NS022 2N5023
CASE 079-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
Refer to 2N3467 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
(Pulse Width = 300 /xs, DC = 1%)
@Total Device Dissipation T^ = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature (Soldering, 60 sec max)
Symbol VCEO VCES VCBO VEBO
'C
2N5022 2N5023 50 30 50 30 50 30
5 1.0*
Unit
V V V V A
PD Pd TJ' Tstg tl
1.0 5.72 4.0 22.8
- 65 to + 200
+ 300
Watts mW/°C Watts mW/°C
X
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
R&jc
Thermal Resistance, Junction to Ambient
R&JA
Indicates Data in Addition to JEDEC Requirements.
Max
43.8 175
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.:
OFF CHARACTERIST...
