2N5058

2N5058 2N5059 CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N5058 2N5059 VCEO 300 vCBO 300 v EBO 7.0 250 250 6.0 ic 150 PD - 1.0 6.67 Pd TJ. Tstg 5.0 33.3 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C Refer to 2N3724 for graphs. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc RftjAd) CELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) dC = 30 mAdc, Is = 0) 2N5058 2N5059 Collector-Base Breakdown Voltage dC = 100 ^Adc, lg = 0) 2N5058 2N5059 Emitter-Base Break...