2N5231

MAXIMUM RATINGS Rating Emitter-Collector Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N5229 2N5230 2N5231 VECO v CBO v EBO "C PD 10 15 15 20 30 30 50 0.5 2.86 30 50 50 PD TJ- Tstg 2.0 12 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 2N5229 2N5230 2N5231 CASE 26-03, STYLE 1 TO-46 (TO-206AB) LOW POWER CHOPPER TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage E(l = 10 /iAdc, Bl = 0) 2N5229 2N5230 2N5231 Collector-Base Breakdown Voltage C(l = 10 /nAdc, El = 0) 2N5229 2N5230 2N5231 Emitter-Base Breakdown Voltage E(l = 10 ^Adc, C| = 0) 2N5229 2N5230 2N5231 Collector Cutoff Current (Vcb = 12 Vdc, l£ = 0) (VC B = 25 Vdc, El = 0) (Vcb = 40 Vdc, l...