Document
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area
APPLICATIONS For use in power amplifier and switching
circuits applications.
PINNING PIN 1 2 3
DESCRIPTION Base Emitter Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5301
VCBO
Collector-base voltage 2N5302
2N5303
2N5301
VCEO
Collector-emitter voltage 2N5302
2N5303
VEBO
Emitter-base voltage
IC Collector current
2N5301/5302 2N5303
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 40 60 80 40 60 80 5 30 20 7.5 200 200
-65~200
UNIT V
V V A A W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE 0.875
UNIT /W
Inchange Semiconductor
Silicon.